Crystals, Vol. 14, Pages 989: Growth and Characterization of High-Quality YTiO3 Single Crystals: Minimizing Ti4+ Containing Impurities and TiN Formation

Crystals, Vol. 14, Pages 989: Growth and Characterization of High-Quality YTiO3 Single Crystals: Minimizing Ti4+ Containing Impurities and TiN Formation

Crystals doi: 10.3390/cryst14110989

Authors: Yong Liu David Wenhua Bi Arnaud Magrez

We report the growth of YTiO3 single crystals using different starting materials with the nominal compositions, (1) stoichiometric YTiO3; (2) oxygen deficient YTiO2.925; (3) oxygen deficient YTiO2.85, and different atmospheres, (1) 97%Ar/ 3%H2; (2) Ar; (3) forming gas 95%N2/ 5%H2, using the laser floating zone growth technique. The oxygen-deficient starting materials were prepared by mixing Y2O3, Ti2O3, and Ti powder according to the YTiO3-δ stoichiometry. The addition of Ti powder to the starting materials effectively reacts with the oxygen in the floating zone furnace chamber, reducing Ti4+ ion-containing impurities. High-quality YTiO3 single crystals with (2 0 0) facet were grown from the starting materials corresponding to the nominal composition YTiO2.925. YTiO₃ single crystals grown from different starting materials are characteristic of oxygen content of 3 in both pure crystals and crystals containing impurities, revealed by the same oxygen occupancy in single crystal X-ray diffraction measurements. When forming gas was used, a golden TiN coating formed on the surface of rod.