Electronics, Vol. 12, Pages 2349: Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

Electronics, Vol. 12, Pages 2349: Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET

Electronics doi: 10.3390/electronics12112349

Authors: Fan Zhang Yibo Wang Yi Liu Minghu Wu Zilong Zhou

As the manufacturing process level of semiconductor devices continues to improve, the device size gradually decreases, and the devices are affected by the single event effect more and more severely. In this paper, the physical process of single particle incident N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) is simulated. By changing the particle incidence position, incidence angle, LET value, and temperature, the transient current variation with time is obtained, and the susceptibility of the device to single event effect under the action of four factors is analyzed, which provides the basis for the next research of the device against single event effect and ideas for the radiation hardening of semiconductor devices. In addition, in these experiments, there were bimodal-shaped current pulses that were different from single peak transient current pulses. Therefore, a new model describing the bimodal single event transient (SET) current waveform was proposed, which can be used as a current source model in circuit simulation and help to predict the ability of the circuit to resist the single event effect.