Electronics, Vol. 12, Pages 2833: Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU

Electronics, Vol. 12, Pages 2833: Heavy Ion Single Event Effects in CMOS Image Sensors: SET and SEU

Electronics doi: 10.3390/electronics12132833

Authors: Zhikang Yang Lin Wen Yudong Li Jie Feng Dong Zhou Bingkai Liu Zitao Zhao Qi Guo

High-energy particles in space often induce single event effects in CMOS image sensors, resulting in performance degradation and functional failure. This paper focuses on the formation and morphology of transient bright spots in CMOS image sensors and analyzes the formation process of transient bright spots by conducting heavy ion irradiation experiments to obtain the variation law of transient bright spots with heavy ion linear energy transfer values and background gray values; in addition, we classify the single event upset that occurred in the experiments according to the state of transient bright spots and extract the characteristics of different single event upsets. The failure mechanisms of different single event upsets are analyzed according to their characteristics and are combined with the information given by transient bright spots. This provides an essential reference for rapidly evaluating single event effects and the reinforcement design of CMOS image sensors.