Micromachines, Vol. 14, Pages 784: Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Micromachines, Vol. 14, Pages 784: Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Micromachines doi: 10.3390/mi14040784

Authors: Qing Chen Rong Sun Ruixia Miao Hanxiao Liu Lulu Yang Zengwei Qi Wei He Jianwei Li

In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap than Si, so a heterojunction with SiGe(source)/Si(channel) can result in a smaller tunneling distance, which is very helpful in boosting the tunneling rate. The gate dielectric near the drain region consists of low-k SiO2 to weaken the gate control of the channel-drain tunneling junction and reduce the ambipolar current (Iamb). In contrast, the gate dielectric near the source region consists of high-k HfO2 to increase the on-state current (Ion) through the method of gate control. To further increase Ion, an n+-doped auxiliary tunneling barrier layer (pocket)is used to reduce the tunneling distance. Therefore, the proposed HJ-HD-P-DGTFET can obtain a higher on-state current and suppressed ambipolar effect. The simulation results show that a large Ion of 7.79 × 10−5 A/μm, a suppressed Ioff of 8.16 × 10−18 A/μm, minimum subthreshold swing (SSmin) of 19 mV/dec, a cutoff frequency (fT) of 19.95 GHz, and gain bandwidth product (GBW) of 2.07 GHz can be achieved. The data indicate that HJ-HD-P-DGTFET is a promising device for low-power-consumption radio frequency applications.