Nanomaterials, Vol. 13, Pages 1879: Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Nanomaterials, Vol. 13, Pages 1879: Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Nanomaterials doi: 10.3390/nano13121879

Authors: Somnath S. Kundale Girish U. Kamble Pradnya P. Patil Snehal L. Patil Kasturi A. Rokade Atul C. Khot Kiran A. Nirmal Rajanish K. Kamat Kyeong Heon Kim Ho-Myoung An Tukaram D. Dongale Tae Geun Kim

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.